High-pressure polysilicon encapsulated localized oxidation of silicon
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United States of America Patent
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Dec 29, 1992
Grant Date -
N/A
app pub date -
Nov 13, 1990
filing date -
Nov 13, 1990
priority date (Note) -
Expired
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Abstract
A reduction in defects and lateral encroachment is obtained by utilizing a high pressure oxidation in conjunction with an oxidizable layer conformally deposited over an oxidation mask. The use of high pressure oxidation provides for the formation of LOCOS oxide without the formation of defects. Any native oxide present on the substrate surface is removed by using a ramped temperature deposition process to form oxidizable layer and/or a high temperature anneal is performed to remove the native oxide at the substrate surface. In this embodiment, any oxide which can act as a pipe for oxygen diffusion is removed. Therefore, nominal or no lateral encroachment is exhibited.
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