High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity Performance
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United States of America Patent
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Issued Date -
Aug 28, 2008
app pub date -
Feb 22, 2008
filing date -
Feb 23, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.
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